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TYPICAL PERFORMANCE CURVES (R)
APT25GT120BRDQ2 APT25GT120BRDQ2G*
APT25GT120BRDQ2(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 50KHz * Ultra Low Leakage Current
G
TO -2 47
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT25GT120BRDQ2(G) UNIT Volts
1200 30 54 25 75 75A @ 1200V 347 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.7
2 2
5.5 3.2 3.9
6.5 3.7 200 TBD 120
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
A nA
12-2005 052-6269 Rev B
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT25GT120BRDQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 25A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
1845 170 110 10.0 170 20 100 75 14 27 150 36 930 1860 720 14 27 175 45 925 3265 965 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 25A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V I C = 25A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.36 .61 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6269
Rev B
12-2005
TYPICAL PERFORMANCE CURVES
80 70 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 2 4 6 8 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
100
APT25GT120BRDQ2(G)
15V 13V
80
TJ = 25C TJ = 125C
60
12V
TJ = -55C
11V
40
10V
20
9V
0
80 70 60 50 40 30 20 10
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 25A C T = 25C
J
8V 7V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
TJ = -55C
VCE = 960V
8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC)
TJ = 25C TJ = 125C
0
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics IC = 50A
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6 5 4 3 2 1 0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 50A IC = 25A
IC = 25A
3 2 1 0
IC = 12.5A
IC = 12.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
6
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80
70 60 50 40 12-2005 052-6269 Rev B 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
30 25 20 15 10 5 T = 25C, or 125C J
VCE = 800V RG = 5 L = 100H
200 td (OFF), TURN-OFF DELAY TIME (ns) 180 160 140 120 100 80 60 40
VCE = 800V 20 RG = 5 VGE =15V,TJ=125C
APT25GT120BRDQ2(G)
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
VGE =15V,TJ=25C
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
70 60 50 40 30 20 10
RG = 5, L = 100H, VCE = 800V
0
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
50 45 40 tf, FALL TIME (ns) 35 30 25 20 15 10 5
TJ = 25C, VGE = 15V
0
L = 100H
RG = 5, L = 100H, VCE = 800V
tr, RISE TIME (ns)
TJ = 125C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
10,000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 5
G
0
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
2500
V = 800V CE V = +15V GE R = 5
G
0
8,000
TJ = 125C
2000
TJ = 125C
6,000
1500
4,000
1000
TJ = 25C
2,000
TJ = 25C
500
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
18,000 SWITCHING ENERGY LOSSES (J) 16,000 14,000 12,000 10,000 8,000 6,000 4,000 2,000 0
Eon2,25A Eon2,12.5A Eoff,25A Eoff,12.5A Eoff,50A
V = 800V CE V = +15V GE T = 125C
J
0
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
9,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 5
G
0
Eon2,50A
8,000 7,000 6,000 5,000 4,000 3,000 2,000 1,000 0
Eon2,50A
12-2005
Eon2,25A Eon2,12.5A Eoff,12.5A
Eoff,50A Eoff,25A
Rev B
052-6269
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000 IC, COLLECTOR CURRENT (A) Cies 1,000 C, CAPACITANCE ( F) 500 Coes 100 50 Cres
P
80 70 60 50 40 30 20 10
APT25GT120BRDQ2(G)
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.3 0.7 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.5
Note:
PDM
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz)
50
RC MODEL Junction temp. (C) 0.178 Power (watts) 0.182 Case temperature. (C) 0.136 0.0101
F
10 5
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 5 10
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6269
Rev B
12-2005
APT25GT120BRDQ2(G)
APT40DQ120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr Collector Current 5% 90% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6269
Rev B
12-2005
TYPICAL PERFORMANCE CURVES
APT25GT120BRDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 112C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 25A Forward Voltage IF = 50A IF = 25A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT25GT120BRDQ2(G) UNIT Amps
40 63 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.5 2.9 1.5
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.7 0.40 0.30 0.20 0.10 0 10-5 0.5 0.3 0.1 0.05 10-4
Note:
26 350 570 4 430 2200 9 210 3400 29 -
IF = 40A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 40A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.9
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.0442 0.00222
0.242
0.00586
0.324 Case temperature (C)
0.0596
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6269
Rev B
Power (watts)
12-2005
120 100 80 60 40 20 0 TJ = 125C TJ = 25C TJ = -55C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 20A 40A
T = 125C J V = 800V
R
600 trr, REVERSE RECOVERY TIME (ns) 500 400 300 200 100 0
APT25GT120BRDQ2(G)
T = 125C J V = 800V
R
IF, FORWARD CURRENT (A)
80A 40A 20A
TJ = 175C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
80A
80A
40A
20A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30
Duty cycle = 0.5 T = 175C
J
1.2
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
Qrr trr trr IRRM
1.0 0.8 0.6 0.4 0.2 0.0
Qrr
20 10
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 200
CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
12-2005
50
Rev B
052-6269
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10078BLL
APT25GT120BRDQ2(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6269
Dimensions in Millimeters and (Inches)
Rev B
Gate Collector (Cathode) Emitter (Anode)
12-2005
19.81 (.780) 20.32 (.800)

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